NUP4202W1T2G【PDF 2/9 页】IC TVS ARRAY HS DATALINE SOT-363

您好，
买卖IC网欢迎您。
请登录
免费注册

1页 [2页]3页 4页 5页 6页

NUP4202W1

ELECTRICAL CHARACTERISTICS

(T A = 25 ° C unless otherwise noted)

Symbol Parameter

I PP

Maximum Reverse Peak Pulse Current

V C

Clamping Voltage @ I PP

I F

I

I R V F

V RWM

I R

V BR

Working Peak Reverse Voltage

Maximum Reverse Leakage Current @ V RWM

Breakdown Voltage @ I T

V C V BR V RWM

I T

V

I T

Test Current

I F

V F

P pk

C

Forward Current

Forward Voltage @ I F

Peak Power Dissipation

Capacitance @ V R = 0 and f = 1.0 MHz

I PP

Uni ? Directional TVS

*See Application Note AND8308/D for detailed explanations of

datasheet parameters.

ELECTRICAL CHARACTERISTICS (T J =25 ° C unless otherwise specified)

Parameter

Symbol

Conditions

Min

Typ

Max

Unit

Reverse Working Voltage

Breakdown Voltage

Reverse Leakage Current

V RWM

V BR

I R

(Note 2)

I T = 1 mA, (Note 3)

V RWM = 5 V

6.0

5.0

5.0

V

V

m A

Clamping Voltage

Clamping Voltage

Maximum Peak Pulse Current

Junction Capacitance

Junction Capacitance

Clamping Voltage

Clamping Voltage

V C

V C

I PP

C J

C J

V C

V C

I PP = 5 A (Note 4)

I PP = 8 A (Note 4)

8x20 m s Waveform (Note 4)

V R = 0 V, f = 1 MHz between I/O Pins and GND

V R = 0 V, f = 1 MHz between I/O Pins

@ I PP = 1 A (Notes 5 and 6)

Per IEC 61000 ? 4 ? 2 (Note 7)

8.5

8.9

3.0

1.5

14.5

Figure 1 and 2

12.5

20

28

5.0

3.0

V

V

A

pF

pF

V

V

2. TVS devices are normally selected according to the working peak reverse voltage (V RWM ), which should be equal or greater than the DC

or continuous peak operating voltage level.

3. V BR is measured at pulse test current I T .

4. Nonrepetitive current pulse per Figure 5 (Pin 5 to Pin 2).

5. Nonrepetitive current pulse per Figure 5 (Any I/O Pins).

6. Surge current waveform per Figure 5.

7. For test procedure see Figures 3 and 4 and Application Note AND8307/D.

Figure 1. ESD Clamping Voltage Screenshot

Positive 8 kV Contact per IEC61000 ? 4 ? 2

Figure 2. ESD Clamping Voltage Screenshot

Negative 8 kV Contact per IEC61000 ? 4 ? 2

http://onsemi.com

2

发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

*型号	*数量	厂商	批号	封装

添加更多采购

我的联系方式

*

*

*

相关PDF资料

NUP4212UPMUTAG TVS QUAD ARRAY LOW CAP 6-UDFN

NUP4302MR6T1 IC DIODE ARRAY SCHOTTKY TSOP6

NUP4304MR6T1 IC DIODE ARRAY LO CAP ESD SC74-6

NUP45V6P5T5G TVS QUAD ARRAY LOW CAP SOT-953

NUP46V8P5T5G TVS QUAD ARRAY LOW CAP SOT-953

NUP5120X6T2G IC TVS ARRAY 5LINE SOT-563

NUP5150MUTBG IC TVS ARRAY 5LINE ESD 6-UDFN

NUP6012PMUTAG TVS ESD 6CH LOW CAP 6-UDFN

相关代理商/技术参数

NUP4212UPMU 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Quad Transient Voltage Suppressor Array

NUP4212UPMUTAG 功能描述:TVS二极管阵列 ULTR LO CAPACITANCE ESD PRTCT ARRAY RoHS:否制造商:Littelfuse 极性: 通道:4 Channels 击穿电压: 钳位电压:11.5 V 工作电压:2.5 V 峰值浪涌电流:20 A 安装风格:SMD/SMT 端接类型:SMD/SMT 系列: 最小工作温度:- 40 C 最大工作温度:+ 85 C

NUP4301 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Low cap. diode array for 2 Line High Speed USB protection devic

NUP4301MR6T1 功能描述:整流器 Low Cap. for ESD RoHS:否制造商:Vishay Semiconductors 产品:Standard Recovery Rectifiers 配置: 反向电压:100 V 正向电压下降: 恢复时间:1.2 us 正向连续电流:2 A 最大浪涌电流:35 A 反向电流 IR:5 uA 安装风格:SMD/SMT 封装 / 箱体:DO-221AC 封装:Reel

NUP4301MR6T1/D 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Low Capacitance Diode Array for ESD Protection in Four Data Lines

NUP4301MR6T1_05 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Low Capacitance Diode Array for ESD Protection in Four Data Lines

NUP4301MR6T1G 功能描述:整流器 Low Cap. for ESD Protection in 4 Line RoHS:否制造商:Vishay Semiconductors 产品:Standard Recovery Rectifiers 配置: 反向电压:100 V 正向电压下降: 恢复时间:1.2 us 正向连续电流:2 A 最大浪涌电流:35 A 反向电流 IR:5 uA 安装风格:SMD/SMT 封装 / 箱体:DO-221AC 封装:Reel

NUP4301MR6T1G 制造商:ON Semiconductor 功能描述:TVS DIODE ARRAY 70V TSOP 制造商:ON Semiconductor 功能描述:TVS DIODE ARRAY, 70V, TSOP